Figure 3 | Scientific Reports

Figure 3

From: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices

Figure 3

Surface morphology by SEM of the PZT thin films obtained at different annealing temperatures from the Photosensitive

(a) and Seeded Photosensitive (b) solution systems. X-ray diffractograms of the films annealed at 600 °C are included. A scheme showing the respective crystallization mechanisms proposed for each system at different stages (i: photoactivated gel film; ii: amorphous oxide film; iii: crystalline PZT film) is depicted.

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