Figure 5 | Scientific Reports

Figure 5

From: Ultra-low Doping on Two-Dimensional Transition Metal Dichalcogenides using DNA Nanostructure Doped by a Combination of Lanthanide and Metal Ions

Figure 5

Electrical characterization of TMD transistors doped by Ln-DNA.

ID − VG characteristics of the (a) MoS2 and (d) WSe2 transistors undoped/doped by Gd3+-DNA. Threshold voltage shifts (ΔVTH = VTH_Ln-DNA – VTH_Control) and variations of carrier concentration (Δn = n_Ln-DNA – n_Control and Δp = p_Ln-DNA – p_Control) extracted in (b) MoS2 and (e) WSe2 transistors, which were undoped/doped by Ln-DNA. On-current ratio (Ion ratio = Ion_Ln-DNA/Ion_Control) extracted in the undoped/doped (c) MoS2 and (f) WSe2 transistors.

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