Figure 2
From: Thermoelectric Power in Bilayer Graphene Device with Ionic Liquid Gating
(a) Sheet resistance R□ versus bottom gate Vbg at T = 20 K under three different side gate voltages Vig. (b) The resistance peak location in (a) as a function of side gate voltage Vig at T = 300 K and 20 K. (c) Conductance at CNP GCNP versus 100/T. A band gap of Eg = 36.6 ± 3 meV is obtained for Vig = −1 V. Solid line is the fitting curve based on the thermal-activation formula.
