Figure 5 | Scientific Reports

Figure 5

From: Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Figure 5

(a) Selected area diffraction pattern of the GaN/AlN buffer layer/sapphire region. (b) Plan-view TEM images of semi-polar (11–22) GaN films under two-beam conditions with g = 1–100. Cross sectional weak-beam dark field (WBDF) TEM of semi-polar (11–22) GaN with the reflection g = 0002 (c) and g = 11–20 (d), HRTEM images of AlN buffer/sapphire interface (e) and GaN/AlN buffer interface (f) were taken at the [10–10] zone axis, the (0002)AlN and (1–102) sapphire planes are indicated by white lines.

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