Figure 3 | Scientific Reports

Figure 3

From: Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

Figure 3

(a) Raman spectra collected from the ALD HfO2 samples on monolayered graphene transferred on to SiO2/Si substrates. Prior to the ALD of HfO2, the monolayered graphene was pretreated using various methods. For reference, the Raman spectrum of the HfO2/SiO2/Si sample without graphene is also included. (b) Enlarged spectrum of the HfO2/Hf/graphene/SiO2/Si sample with deconvoluted peaks showing the Y and D′ peaks. (c) The 2D and G peak shifts after the HfO2 deposition on the graphene layers subjected to various surface treatments. (d) FWHM values of 2D and G Raman features for the various samples.

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