Table 1 Four probe resistance of the CVD graphene on various substrates.

From: Strong hole-doping and robust resistance-decrease in proton-irradiated graphene

 

substrate

Graphene

sample number

type

Sid oping-level (Ω · cm)

Ri (kΩ)

Rf (kΩ)

ΔR/R (%)

1

 

ρSi = 10

1.71

0.66

−61

2

SiO2/p-Si

ρSi = 10

1.11

0.34

−69

3

 

ρSi = 0.01

1.69

0.69

−59

4

SiO2/n-Si

ρSi = 0.01

1.55

0.55

−64.5

5

Glass

—

1280

1260

−1.5

6

Al2O3

—

470

400

−15

  1. Ri = initial resistance before irradiation. Rf = final resistance after irradiation.
Back to article page