Figure 5
From: Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy
Physicochemical characterization of a RRAM device programmed in LRS.
Optical density TXM micrographs of LRS device obtained with photon energy of 450 eV (a) and 458 eV (b,c). NEXAFS Ti 2p (d) and O 1 s (e) spectra extracted from the regions circled in the X-ray images b and c. Scale bar (a,b) 150 nm; (c) 100 nm.
