Table 1 Calculated electron capture rate constants Bn and hole capture rate constants Bp through defects levels at points A, B, C, D and E in Figs 2 and 3.
From: Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study
Level | Bn(cm3 s−1) | Bp(cm3 s−1) |
|---|---|---|
A(TeCd) | 2.50 × 10−7 | – |
B(TeCd) | 1.69 × 10−10 | 1.67 × 10−7 |
C(TeCd) | – | 2.46 × 10−6 |
D(VCd) | 3.54 × 10−10 | 1.55 × 10−11 |
E(VCd) | – | 3.95 × 10−8 |
