Figure 2: Free electron densities with respect to Fermi energies (0 at conduction band minimum), for several channel widths (Lz), ranging from 5 nm to 20 nm. | Scientific Reports

Figure 2: Free electron densities with respect to Fermi energies (0 at conduction band minimum), for several channel widths (Lz), ranging from 5 nm to 20 nm.

From: III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Figure 2

For this calculation, the temperature T was room temperature (300 K), Lx was 10 nm, Ly was 20 nm and the material parameters of In0.53Ga0.47As were as follows: dielectric constant = 13.56, lattice parameter c = 5.87 Å and m*0 = 0.041 m0 (at Γ-valley).

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