Figure 2: The MR with the applied magnetic field B⊥E or B||E.

Schematic diagram of electrical transport measurements are shown in insert respectively. (a) The magnetoresistance vs magnetic field in B⊥E at various temperatures from 2 K to 150 K. The insert show the sharp cusp at low magnetic field. (b) The magnetoresistance with B‖E at various temperatures from 2 K to 200 K. The WAL effect is also clear around zero fields. With the magnetic field increasing, the MR decreasing shows a negative MR phenomenon with a weak temperature dependent below 150 K. However, it increase with increasing magnetic field when B > 5T.