Figure 3
Si L2,3 XES (left pane) and TEY-mode Si 2p XAS (right pane) measurements of ESMLs at various levels of oxidation, with a 15-point FFT smoothing overlaid on the monolayer XES data for clarity.
Spectra obtained after the in vacuo transfer are labelled by the total amount of XES beam exposure prior to the measurement, while the fully oxidized ESML is labelled “Ambient”. Also included is the emission spectrum of bulk SiO2 and the absorption spectrum of a native surface oxide on a Si wafer for reference. Vertical blue dotted lines indicate 100 eV on both panes to show approximately where the XES/XAS overlap occurs.
