Figure 2: Depth-profile XPS spectra.

The nominal P concentration is 2%. (a) Si 2p and (b) P 2p peaks for the P-doped Si NCs/SiO2 multilayers after 1000 °C annealing are detected. Insets are the schematic diagrams of Si-Si, Si-O and Si-P bonds.
The nominal P concentration is 2%. (a) Si 2p and (b) P 2p peaks for the P-doped Si NCs/SiO2 multilayers after 1000 °C annealing are detected. Insets are the schematic diagrams of Si-Si, Si-O and Si-P bonds.