Figure 2
From: Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters
(a) Energy band lineup of AlInN-delta-GaN QW along with the carrier wavefunctions for both the electron and heavy hole in the conduction and valence band, respectively, with the calculation performed self-consistently at sheet carrier density (n2D) = 1 × 1013 cm−2. (b) Valence band structure of the 20 Å Al0.92In0.08N/5 Å delta-GaN QW with AlN barriers.
