Figure 3
From: High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
(a) Transfer characteristics of HPA activated a-IGZO TFTs varying O2 pressure at 100 °C (b) PBS test result of HPA activated a-IGZO TFTs under O2 2 MPa at 100 °C.
