Figure 5
Calculated thermally induced von Mises stress plotted as a function of distance to the sample edge for different times (40–400 ns after laser annealing).
Stress levels within the silicon substrate almost reach the estimated fracture strength of silicon (1.36 ± 0.15 GPa) at approximately 3.6 ± 0.3 μm relative to edge of the TEM sample. Additional stress due to hydrodynamic sputtering effects is not considered in the presented data. Fracturing of the substrate was experimentally observed within 3.6 μm relative to the sample edge.
