Figure 3 | Scientific Reports

Figure 3

From: The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities

Figure 3

He I excited UPS valence band spectra of the cleaned SiC substrate and the ZnO/SiC samples, with different thickness ZnO layer as indicated by the MBE deposition times 3, 5, 20 and 30 min.

The spectra are shown on a linear (left) and logarithmic (right) scale. The red lines in the left panel indicate the linear extrapolation of the leading UPS edge to the base line to derive the position of the valence band maximum (VBM) with respect to the Fermi level. The thus derived VBM values are also indicated by arrows in the right panel and have an error bar of ±0.1 eV for the SiC sample and ±0.2 eV for the 30 min ZnO/SiC sample.

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