Table 1 The valence and conduction band offsets at differently prepared ZnO/SiC interfaces.

From: The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities

Interface

VBO (eV)

CBO (eV)

Reference

ZnO/6H-SiC

1.2 ± 0.3

0.8

this study

ZnO/6H-SiC

1.38 ± 0.28

1.01 ± 0.28

A. Ashrafi ref. 24

ZnO/4H-SiC

1.61 ± 0.23

1.50 ± 0.23

H. Fan ref. 14

  1. Italic numbers indicate estimated values (see text for more details)
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