Table 1 The mass density, electrical conductivity, Hall carrier density, Hall mobility and Seebeck coefficient for the pressed Sb2−xInxTe3 (x = 0–0.2) at 300 K.

From: A strategy to optimize the thermoelectric performance in a spark plasma sintering process

Sample compositions

d(g cm−3)

σ(S m−1)

nH(1019 cm−3)

μ(cm2 V−1 s−1)

S(μV K−1)

Sb2Te3

6.44

298507

6.42

291

90

Sb1.95In0.05Te3

6.35

194932

5.09

239

92

Sb1.90In0.10Te3

6.33

111349

3.82

182

100

Sb1.85In0.15Te3

6.30

73903

2.95

156

120

Sb1.80In0.20Te3

6.29

35433

2.67

83

146

Back to article page