Figure 3
From: Vertical Microcavity Organic Light-emitting Field-effect Transistors
Optical images of devices.
Optical images for the device without DBR, (a) bottom emission, (b) top emission. Optical images for the DBR device with different top mirrors, (c) 80 nm Ag, (d) 40 nm Ag. All the devices are biased at VGS = −120 V, VDS = −100 V. The scale bar is 50 μm.
