Figure 4
From: Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
Variation of global gap (Eg) and the direct band gap (EГ) as a function of external strain (a) and electric field (b) for InBiCH3. The inserts are the diagram of evolution for atomic orbitals with strain. The evolution of atomic s and pxy orbitals at Г point is described as chemical bonding and SOC are switched on in sequence for ε < −7% (c) and ε > −7% (d). The horizontal black dashed lines indicate the Fermi level.
