Figure 2
From: A p-i-n junction diode based on locally doped carbon nanotube network
Transfer characteristics of a SWNT-FET before and after doping.
(a) Transfer characteristics of an SWNT-FET at VDS = 1.5 V before and after OA doping with a doping time (t1) of 0.5 h, 1 h and 5 h, respectively. (b) Transfer characteristics of an SWNT-FET at VDS = 1.5 V before and after PEI doping with a doping time (t2) of 1 h, 6 h and 12 h, respectively.
