Figure 1: Sample characterizations. | Scientific Reports

Figure 1: Sample characterizations.

From: Field-driven domain wall motion under a bias current in the creep and flow regimes in Pt/[CoSiB/Pt]N nanowires

Figure 1

(a) Sample structure and (b) schematic illustration of the experiment setup of [CoSiB/Pt]N nanowires. A is the electrode to inject a pulse current and create a DW. DC current is applied into A and B electrodes and the Hall voltage is measured at C electrode. (c) Normalized Hall resistance RH data of [CoSiB/Pt]N nanowires for N = 3, 6 and 9. The switching field corresponds to the coercive field. (d) Normalized Hall resistance RH data after creating DW when perpendicular magnetic field pushes the DW to Hall bar. The switching field corresponds to the depinning field.

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