Figure 4
From: Inhibition of unintentional extra carriers by Mn valence change for high insulating devices
(a) the fresh dark I-V characteristic curve of the (GaMn)2O3 photodetector; (b) I-V curves of the (GaMn)2O3 photodetector in dark and under 254 nm light with varied optical input power; (c) the consecutive sweeps of I-V curves of the (GaMn)2O3 photodetector when the illumination turns off and the change of sweep voltage is depicted in the upper left inset.
