Figure 5
From: Inhibition of unintentional extra carriers by Mn valence change for high insulating devices
Time-dependent photoresponse of the Ga2O3 (a) and (GaMn)2O3 (b) photodetectors to 254 nm UV light illumination with varied optical input power (50, 100, 150 μW/cm2) by on/off switching at 10 V and (c,d) are the corresponding fitted curve for the current rise and decay process of (a,b) respectively. The sensitivity and spectra responsivity (R) of the photodetectors with varied optical input power (e) and varied applied bias (f).
