Figure 6
From: Inhibition of unintentional extra carriers by Mn valence change for high insulating devices
(a) The conventional unit cell of monoclinic β-Ga2O3; Band structure plots of pure β-Ga2O3 (b) and Mn replacing two adjacent octahedral sites in an conventional unit cell with a dopant concentration of 25% (c,d) Schematic diagram showing mid-gap Fermi level near the Mn2+/Mn3+ transition level.
