Figure 2
A spin wave field-effect transistor and numerical simulation of its performance.
(a) Schematics of the spin wave FET. Spin waves are generated by an oscillating magnetic field H(t) at one end of the device and then modulated by a gate voltage VG. At the far end of the device, spin pumping into a heavy metal (e.g., Pt) induces an inverse spin Hall voltage which is measured by two voltmeters V1 and V2. (b) Spin wave spectrum in the presence of the Dzyaloshinskii-Moriya interaction. (c) Numerical simulation of an amplitude shift keying on a AFM nanostrip (see Method). Spin wave signal of 1.4 THz is modulated by a 20 GHz square wave from VG. The relaxation time τ ≈ 3.5 ps. (d) Parametric plot of the spatial pattern of the Néel order for selected sites in and around the gate during the interval t ∈ [40 ps, 50 ps).
