Figure 2: Grazing incidence angle X-ray diffraction (GIAXRD) patterns of films A through E, in the (a) as-deposited state and (b) after annealing at 250 °C for 1 hr in air. | Scientific Reports

Figure 2: Grazing incidence angle X-ray diffraction (GIAXRD) patterns of films A through E, in the (a) as-deposited state and (b) after annealing at 250 °C for 1 hr in air.

From: A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content

Figure 2

Peaks that correspond to those of cubic Zn3N2 appear in the N-rich film A, while films B, C, and D exhibit structure that are close to being amorphous. Film E consists of crystalline ZnO with a strong (002) peak.

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