Table 1 Electrical parameters of the TFT devices based on films A through E.

From: A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content

Condition

μFE(cm2/Vs)

Vth (V)

S (V/dec)

A

N/A

N/A

N/A

B

35.9

−9.64

5.09

C

42.6

−6.84

3.61

D

128

−4.24

1.34

E

6.60

−0.65

0.97