Figure 3
From: Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
(a) TEM image of Ge-GeSn layers on silicon linear cavity prepared by PLD process, which shows crystal structure in (111) direction after annealing; (b) Evolution curves of energy bandgap with change of uniaxial tensile strain in the (111) direction in the calculation results6; (c) PL spectrum at 17 K in the Ge-GeSn layers on silicon linear cavity (as shown in the inset) prepared by PLD process after annealing, in which the peak occurs near 1500 nm.
