Figure 4
From: Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
Intensity evolution with pumping change of power in the PL spectra at 20 K, in which the peaks of direct bandgap emission near 1600 nm related to the uniaxial tensile strain in the (111) direction are obviously observed in the Ge-GeSn layers on the 1D structure (linear pillar as shown in the inset).
