Figure 5
From: Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
(a) SEM image of silicon linear pillar on which Ge-Si layers are deposited roll-down; (b) The peak of direct bandgap emission near 1663 nm related to the uniaxial tensile strain in the (111) direction in the PL spectra measured in the Ge-GeSn layers on the 1D structure (pillar), in which emission near 1663 nm is not observed in the Ge-Si layers on the 1D structure; (c) Change curves of PL intensity with rising temperature from 17 K to 200 K, in which it is noted that the peak at 1663 nm disappears at 150 K obviously.
