Figure 6
From: Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure
(a) TEM image of Ge-GeSn crystal in (110) direction after annealing on silicon pillars prepared by PLD process; (b) Evolution curves of energy bandgap with change of uniaxial tensile strain in the (110) direction in the calculation results6; (c) PL peak near 1700 nm measured at 17 K in the Ge-GeSn layers on silicon pillar (as shown in the inset) prepared by PLD process after annealing; (d) Intensity evolution with pumping change of power, in which the peaks occur near 1700 nm.
