Figure 1
From: Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
Photoemission spectra of Ga 2p3/2 (a), N 1 s (b) and O 1 s (c) obtained under several experimental conditions: as received, pristine (UHV) and 0.1 mbar of H2O at room temperature (RT), 373 K and 773 K. The features at BEs below 397 eV can be attributed to Ga Auger peaks, e.g., L2M45M45 at ~396 eV. Notes: The binding energy scale was calibrated to the N 1 s of N-Ga bond at the BE of 397.8 eV. The Ga 3d spectra obtained for the same experimental conditions and using the same calibration method of binding energy scale are presented in Figure S1 for a better comparison of chemical changes.
