Figure 2
From: Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions
Photoemission spectra of the valence band (a), zoom in view of the valence band (b) and Ga 3d (c) under several experimental conditions: as received, pristine (UHV) and 0.1 mbar of H2O at RT, 373 K and 773 K. The perpendicular lines in (c) indicate a position of Ga 3d5/2 that originates from the Ga-N component and is determined by peak fitting of Ga 3d photoemission spectra (Figure S2). Note: The binding energy scale was calibrated to the Fermi edge of pristine Au(111).
