Figure 1

Comparison of JV-curves from 1D DD simulations (symbols) and the analytical approximation (lines) according toEq. 10.

Simulations were performed with the parameters listed in Table S1 and the very same parameters were used to calculate the value of α according to Eq. 12. Only balanced mobilities are considered here. In Figure (a–c), the nongeminate recombination parameter k₂ was set to 10⁻¹¹cm³ s⁻¹ and the generation rate G was 8 × 10²⁷ m⁻³s⁻¹, independent of free carrier mobility and active layer thickness. (d) displays simulations and calculations with d = 100 nm, μ_e = μ_h = of 10⁻⁴ cm² V⁻¹s⁻¹ and k₂ = 10⁻¹¹ cm³ s⁻¹, but now with G varied over two orders of magnitude (corresponding to illumination conditions between about 0.1 suns to 10 suns for a ca. 2 eV absorption bandgap absorber). The inset displays corresponding results for constant G but variable k₂.