Figure 3
From: Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
Gaussian process model of expected LED efficiency as a function of the indium content of the individual wells in the active region, linearly interpolated from the n-side (first well) to the p-side (last well).
The model is built upon 1000 APSYS simulations spawned by the active learning algorithm and predicts LED efficiency with near perfect accuracy. Left: No indium in the barriers. Right: 5% indium in the barriers. In both cases the optimum is reached with the indium content of the wells decreasing from the n-side to the p-side.
