Figure 4
From: Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
Comparison between the simulation of an initial LED structure (top row) with the simulation of an LED structure optimised by the machine learning algorithm (bottom row).
Left: EL Internal quantum efficiency (IQE) as a function of current density. Right: Radiative recombination rate through the active region, at a current density of 75 A/cm2. The p-side is towards the left. The optimised structure has wider wells, that are getting shallower (less In) towards the p-side.
