Figure 5 | Scientific Reports

Figure 5

From: Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

Figure 5

(a) Schematic drawing of fabricated BP FETs, and the inset shows the side view of BP film. (b) Gate leakage current as a function of gate voltage for the fabricated BP FETs, and inset shows the top-view of the fabricated BP FETs. The gate leakage current is in the range of 10−8~10−10 A under a drain voltage of −0.1 V in the measured gate voltage range. (c) Linear- and log-scale drain current as a function of gate voltage for the fabricated BP FETs with a gate length of 3 μm and a gate width of 8 μm. The gate voltage was swept from 0 V to positive voltage. Low hysteresis was obtained in this work, which further verifies the achievement of good BP/HfO2 interface quality as supported by the near-ideal subthreshold swing. The device shows on/off current ratio of ~102. (d) Output characteristics (ID-VD) of fabricated BP FETs. The output drain current is about 0.4 mA under drain voltage of −1 V and gate-over-drive −1.0 V.

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