Figure 6 | Scientific Reports

Figure 6

From: Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

Figure 6

(a) A benchmark of the room-temperature hole mobility performance as a function of SS between this work and recently reported ones. This work simultaneously achieves a high room temperature hole mobility and near ideal subthreshold swing. P 2p XPS spectra of (b) BP/HfO2 and (c) BP/SiO2 samples. P-O bonding signal in BP/HfO2 interface is suppressed by the Hf-P bonding.

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