Figure 2: TFT operation and substrate structure. | Scientific Reports

Figure 2: TFT operation and substrate structure.

From: Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics

Figure 2

(a,b) Transfer characteristics and field-effect mobility, before and after detachment of a-IGZO TFTs (a) without and (b) with the top neutral plane PI film. (c)Transmittance measurements and (insets) photographs of a substrate with and without TFT devices after detachment from carrier glass. (d) Cross sectional scanning electron microscope (SEM) image of the substrate before detachment from carrier glass. (e) SEM image of the bottom surface of the PI substrate after detachment from carrier glass.

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