Figure 3
From: Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface
Characteristics of SrTiO3 FET with HfO2 (20 nm)/Parylene-C (6 nm) bilayer gate insulator.
(a) Cross sectional TEM image of the channel. (b) Cross sectional scanning TEM (STEM) image near the Al electrode (dotted line is a guide to eyes separating Parylene-C and Al). (c) Energy-dispersive x-ray spectroscopy mapping for Hf atom and (d) that for Sr atom. (e) ISD − VSD plots for 3-terminal device with L = 20 μm and W = 80 μm for several VG. (f) 
for four FETs with different sizes but fixed W/L ratio plotted as a function of L (open circles). Solid line is the least-square fit (WRexp = RO + LR2D) to deduce R2D. (g) R2D vs. 
plot gives S of 171 mV/decade.
