Figure 1
From: Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
Characterization of AlN film grown on c-plane sapphire.
(a) X-ray 2θ/ω scan of AlN thick film; (b) Cross-sectional TEM image of AlN thick film, which contains the sawtooth layer and the columnar layer; (c) SAED pattern taken from the sawtooth layer of (b); (d,e) are the SAED patterns taken from the neighboring column A and B in (b), respectively.
