Figure 5
From: Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
Characterization of AlN film grown on 6H-SiC with (
) twin boundary.
(a) TEM cross sectional image of AlN film. (b) XRD 2θ/ω scan of AlN film indicates that 0002 and 
peaks coexist in the film. (c,d) are SAED patterns correspond to the left interface and the right interface in (b), respectively, which indicate both interfaces are (
) twin boundaries preliminarily. (e) HRTEM image taken from the interfaces between triangle and the column, which demonstrates that the two interfaces are (
) coherent twin boundaries further.
