Figure 5: Variations of the PL intensity with increasing QD layers for several thicknesses of the Si3N4 film.

The solid and open shapes (square, circle, triangle, and diamond) indicate experimental data and fitting results, respectively. PL measurements (photoexcitation at 379 nm) at three different probe spots (~3 × 3 mm2) were made and those results are represented for showing spatial fluctuations. All the PL intensities (y-axis) are adjusted such that the intensity from the QD monolayer on 100-nm thick Si3N4/Ag is 1. The fitting scheme is described in detail in the modeling and simulations section.