Figure 1 | Scientific Reports

Figure 1

From: Self-Heating and Failure in Scalable Graphene Devices

Figure 1

(a–c) Device architectures consisting of (a) epitaxial graphene exposed to atmosphere (Epi/Bare) (b) epitaxial graphene covered in an oxide (Epi/Cov) and (c) CVD graphene covered in an oxide (CVD/Cov). All devices rest on SiC substrates. (d) Breakdown power versus device area accompanied by (e–g) representative thermal images near failure for each of the device architectures. Higher breakdown powers correspond to more uniform heating. Reported temperatures are those directly measured by IR-thermography.

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