Figure 5
From: Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses
Dynamic response of free-standing organic integrated circuits.
(a) Photograph (left) and circuit diagram (right) of fabricated three-stage pseudo-CMOS ring oscillator. Scale bar, 2 mm. (b) Photos of a three-stage pseudo-CMOS ring oscillator without compression (left) and under 50% compression (right). Scale bars, 10 mm. (c) Output signals of the ring oscillator operated with a supply voltage (VDD) of 15 V and tuning voltage (VSS) of −15 V under no compression (black) and under 50% orthogonal compression ε⊥ (red). (d) Signal delay per stage obtained from the output signals of the ring oscillator as a function of VDD. The black solid circles represent the data under no compression and the red triangles represent the data under 50% orthogonal compression ε⊥. The operating speeds remained stable and low-voltage operation at 4 V was possible even when a large compressive strain was put on the ring oscillator circuit.
