Figure 2 | Scientific Reports

Figure 2

From: Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Figure 2

FESEM image of vertically standing GaN NRs (60° tilted view) and corresponding CL spectra of a single GaN nanorod taken at four positions: (a) top, (b) centre and (c) bottom of the nanorod and (d) underlying GaN epitaxial layer. Relatively less intensity of YL at the top of nanorod indicates that top is relatively defect free as compared to centre, bottom and underlying layer. This is also expected as top of the rod is not exposed to ICP-RIE as it is covered by SiO2 and Ni NPs.

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