Table 1 Formation energies and ionization levels for the native defects considered in this study.

From: Suppression of compensating native defect formation during semiconductor processing via excess carriers

Defect

Defect Formation Energies (eV)

Ionization Level (eV)

Ga-Rich

Sb-Rich

1.50

2.44

0.15

1.77

2.71

0.26

1.91

0.97

Above CB Edge

1.56

0.63

0.36

(Ta)

1.38

1.85

Above CB Edge

(Tc)

1.04

1.50

Above CB Edge

  1. Values from ref. 11 calculated at 0 K assuming the valence band edge as the zero of energy.
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