Figure 6
From: Atomic-resolved depth profile of strain and cation intermixing around LaAlO3/SrTiO3 interfaces
MEIS data in blocking mode.
(a,b) MEIS blocking map (E1, θsc, N) of the sample with a film thickness of (a) 3 u.c. (b) 5 u.c. (c,d) MEIS [101] blocking dips of the 5 u.c. sample, as a function of depth corresponding to (c) La atoms (d) Sr atoms located in the film (purple curves) and in the substrate (green curves). Dash-dotted lines are the position of the blocking dips for an unstrained cubic STO (c/a = 1). Dashed lines indicate the position of the blocking dips maxima for each unit cell. In the substrate, deviations of these positions from the dash-dotted line reveal structural distortions.
