Figure 3: Responsivity of the graphene-based photo-detector structure.
From: Gate Tuning of Förster Resonance Energy Transfer in a Graphene - Quantum Dot FET Photo-Detector
(a) Source-drain resistance response as a function of the back-gate voltage for the pure transistor (dark response only, dashed line) as well as for the cQD-functionalized transistor (dark response presented by dotted line) for different pump intensities (straight lines). The dark response of the functionalized Graphene with QDs is shifted relative to the pure graphene to negative voltages. For increasing optical power, the curve shifts back to higher voltages. The resulting responsivities as a function of the back-gate voltage are shown in (b). The point of zero responsivity is observed close to the Dirac point, where the curves in (a) cut the dark response curve. The point of highest responsivity is found at about ±1.7 V and an additional decrease of responsivity is observed towards ±2.0 V.
